Modeling and Simulation of Si Grating Photodetector Fabricated Using MACE Method for NIR Spectrum

In this research, we modeled a silicon-based photodetector for the NIR-IR spectrum using grating structure fabricated metal-assisted chemical etching method. A nanostructure by method is free of defects such as unwanted sidewall metal depositions. The device simulated Lumerical finite difference time domain (FDTD) optical characteristics and CHARGE electrical characteristics. First, optimized duty cycle parameter maximum power absorption particle swarm optimization algorithm provided in FDTD, then used our simulations. From FDTD simulations, found that Cr masker fabrication process acts resonant cavity potential candidate internal photo emission (IPE) effects. By CHARGE, performed simulation adding IPE calculation at 850 nm wavelength Si exhibited 19 mA/W responsivity detectivity 2.62 × 106 Jones −1 volt operating voltage.